通过微孔图案化InGaN/GaN发光二极管侧面的银局域表面等离子体耦合增强光输出功率。
Enhanced optical output power by the silver localized surface plasmon coupling through side facets of micro-hole patterned InGaN/GaN light-emitting diodes.
作者信息
Lee Kang Jea, Kim Seung Hwan, Park Ah Hyun, Lee Seul Be, Lee Gun Hee, Yang Gye-Mo, Pham Hai Dinh, Thu Hoang Thi, Cuong Tran Viet, Suh Eun-Kyung
出版信息
Opt Express. 2014 Jun 30;22 Suppl 4:A1051-8. doi: 10.1364/OE.22.0A1051.
Light extraction efficiency of GaN-based light emitting diodes were significantly enhanced using silver nanostructures incorporated in periodic micro-hole patterned multi quantum wells (MQWs). Our results show an enhancement of 60% in the wall-plug efficiency at an injection current of 100 mA when Ag nano-particles were deposited on side facet of MQWs passivated with SiO2. This improvement can be attributed to an increase in the spontaneous emission rate through resonance coupling between localized surface plasmons in Ag nano-particles and the excitons in MQWs.
通过将银纳米结构结合到周期性微孔图案化多量子阱（MQW）中，基于氮化镓的发光二极管的光提取效率得到了显著提高。我们的结果表明，当银纳米颗粒沉积在经二氧化硅钝化的多量子阱侧面时，在100 mA的注入电流下，壁插效率提高了60%。这种改进可归因于银纳米颗粒中的局域表面等离子体与多量子阱中的激子之间的共振耦合导致自发发射率增加。
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