Department of Chemistry, Technische Universität München , Lichtenbergstraße 4, 85748 Garching, Germany.
Department of Chemistry and Biochemistry, California Polytechnic State University , San Luis Obispo, California 93407, United States.
ACS Nano. 2015 Nov 24;9(11):10563-70. doi: 10.1021/acsnano.5b04872. Epub 2015 Sep 15.
Chiral junctions of carbon nanotubes have the potential of serving as optically or electrically controllable switches. To investigate optoelectronic tuning of a chiral junction, we stamp carbon nanotubes onto a transparent gold surface and locate a tube with a semiconducting-metallic junction. We image topography, laser absorption at 532 nm, and measure I-V curves of the junction with nanometer spatial resolution. The bandgaps on both sides of the junction depend on the applied tip field (Stark effect), so the semiconducting-metallic nature of the junction can be tuned by varying the electric field from the STM tip. Although absolute field values can only be estimated because of the unknown tip geometry, the bandgap shifts are larger than expected from the tip field alone, so optical rectification of the laser and carrier generation by the laser must also affect the bandgap switching of the chiral junction.
碳纳米管的手性结具有作为光学或电可控开关的潜力。为了研究手性结的光电调谐,我们将碳纳米管压印在透明的金表面上,并定位一个具有半导体-金属结的管。我们用纳米空间分辨率成像形貌、532nm 激光吸收,并测量结的 I-V 曲线。结两侧的能带隙取决于施加的尖端场(斯塔克效应),因此通过改变 STM 尖端的电场可以调节结的半导体-金属性质。尽管由于未知的尖端几何形状只能估计绝对场值,但能带隙的位移大于仅由尖端场引起的位移,因此激光的光整流和激光产生的载流子也必须影响手性结的能带隙切换。