ZnZr(Nb1-xAx)2O8（A = Ta，Sb）陶瓷的键离子性、晶格能、键能和微波介电性能
Bond ionicity, lattice energy, bond energy and microwave dielectric properties of ZnZr(Nb1-xAx)2O8 (A = Ta, Sb) ceramics.
作者信息
Zhang Ping, Zhao Yonggui, Haitao Wu
机构信息
School of Electronic and Information Engineering and Key Laboratory of Advanced Ceramics and Machining Technology of Ministry of Education, Tianjin University, Tianjin 300072, P. R. China.
出版信息
Dalton Trans. 2015 Oct 14;44(38):16684-93. doi: 10.1039/c5dt02164b. Epub 2015 Sep 8.
The dependence of microwave dielectric properties on the structural characteristics of ZnZr(Nb1-xAx)2O8 (A = Ta, Sb) (0 ≤x≤ 0.10) ceramics is investigated. All the compounds were prepared by a conventional solid-state reaction method and analyzed via multiphase structure refinement. The diffraction patterns of ZnZr(Nb1-xAx)2O8 (A = Ta, Sb) show the monoclinic wolframite structure of ZrZrNb2O8 which consists of an oxygen octahedron, with the Nb ion in the center of the oxygen octahedron. For the ZnZr(Nb1-xAx)2O8 (A = Ta, Sb) ceramics, the dielectric constant (εr) decreased with the decrease in Nb-site bond ionicity. The quality factor (Q×f) of ZnZr(Nb1-xSbx)2O8 ceramics was found to be the highest (89 400 GHz), which is explained in terms of the average of the Nb-site lattice energy. With the decrease in the bond energy of the Nb-site, the temperature coefficient of resonant frequency (|τf|) value increased. The substitution of A(5+) (A = Ta, Sb) for Nb(5+) effectively influences the microstructure and microwave dielectric properties of ZrZrNb2O8 ceramics.
研究了微波介电性能对ZnZr(Nb1-xAx)2O8（A = Ta，Sb）（0≤x≤0.10）陶瓷结构特征的依赖性。所有化合物均采用传统固相反应法制备，并通过多相结构精修进行分析。ZnZr(Nb1-xAx)2O8（A = Ta，Sb）的衍射图谱显示出ZrZrNb2O8的单斜钨铁矿结构，其由一个氧八面体组成，Nb离子位于氧八面体中心。对于ZnZr(Nb1-xAx)2O8（A = Ta，Sb）陶瓷，介电常数（εr）随Nb位键离子性的降低而减小。发现ZnZr(Nb1-xSbx)2O8陶瓷的品质因数（Q×f）最高（89400 GHz），这可以根据Nb位晶格能的平均值来解释。随着Nb位键能的降低，谐振频率温度系数（|τf|）值增大。用A(5+)（A = Ta，Sb）替代Nb(5+)有效地影响了ZrZrNb2O8陶瓷的微观结构和微波介电性能。
Zotero 插件