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Ta取代Zn3Nb2O8中Nb的影响及其对晶体结构和微波介电性能的影响。

Influence of Ta substitution for Nb in Zn3Nb2O8 and the impact on the crystal structure and microwave dielectric properties.

作者信息

Zhao Yonggui, Zhang Ping

机构信息

School of Electronic and Information Engineering and Key Laboratory of Advanced Ceramics and Machining Technology of Ministry of Education, Tianjin University, Tianjin 300072, P. R. China.

出版信息

Dalton Trans. 2016 Aug 7;45(29):11807-16. doi: 10.1039/c6dt01484d. Epub 2016 Jun 30.

Abstract

Zn3(Nb1-xTax)2O8 (x = 0.02-0.10) ceramics were prepared via a solid-state reaction route and the dependence of their microwave dielectric properties on their structural characteristics were investigated. XRD patterns show that a single Zn3Nb2O8 phase with layered crystal structures was formed in ceramic samples with 0.02 ≤x≤ 0.10. The Raman spectrum was used for the first time to analyze the vibrational phonon modes of the Zn3Nb2O8 samples. Based on P-V-L dielectric theory, the intrinsic factors that influence the microwave dielectric properties were systematically investigated. According to the calculated results, the experimental dielectric constant had a close relationship with the theoretical dielectric constant. The Nb-site lattice energy was found to be a vital factor in explaining the change of the Q×f values. While the Nb-site bond energy increases, the |τf| value decreases which indicates that higher bond energy would result in a more stable system. This work presents a novel method to investigate the intrinsic factors that influence microwave dielectric properties.

摘要

通过固态反应路线制备了Zn3(Nb1-xTax)2O8(x = 0.02 - 0.10)陶瓷,并研究了其微波介电性能对结构特征的依赖性。X射线衍射图谱表明,在0.02≤x≤0.10的陶瓷样品中形成了具有层状晶体结构的单一Zn3Nb2O8相。首次利用拉曼光谱分析了Zn3Nb2O8样品的振动声子模式。基于P-V-L介电理论,系统研究了影响微波介电性能的内在因素。根据计算结果,实验介电常数与理论介电常数密切相关。发现Nb位晶格能是解释Q×f值变化的关键因素。当Nb位键能增加时,|τf|值减小,这表明更高的键能会导致系统更稳定。这项工作提出了一种研究影响微波介电性能内在因素的新方法。

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