Bek Roman, Baumgärtner Stefan, Sauter Fabian, Kahle Hermann, Schwarzbäck Thomas, Jetter Michael, Michler Peter
Opt Express. 2015 Jul 27;23(15):19947-53. doi: 10.1364/OE.23.019947.
We present a passively mode-locked semiconductor disk laser (SDL) emitting at 650nm with intra-cavity second harmonic generation to the ultraviolet (UV) spectral range. Both the gain and the absorber structure contain InP quantum dots (QDs) as active material. In a v-shaped cavity using the semiconductor samples as end mirrors, a beta barium borate (BBO) crystal is placed in front of the semiconductor saturable absorber mirror (SESAM) for pulsed UV laser emission in one of the two outcoupled beams. Autocorrelation (AC) measurements at the fundamental wavelength reveal a FWHM pulse duration of 1.22ps. With a repetition frequency of 836MHz, the average output power is 10mW per beam for the red emission and 0.5mW at 325nm.
我们展示了一种被动锁模半导体盘激光器（SDL），其在650nm处发射，并通过腔内二次谐波产生进入紫外（UV）光谱范围。增益结构和吸收体结构均包含InP量子点（QD）作为活性材料。在使用半导体样品作为端镜的V形腔中，将一块β-硼酸钡（BBO）晶体放置在半导体可饱和吸收镜（SESAM）前方，以便在两个输出光束之一中实现脉冲紫外激光发射。在基波波长下的自相关（AC）测量显示，脉冲持续时间的半高宽为1.22ps。重复频率为836MHz时，每束光的红色发射平均输出功率为10mW，在325nm处为0.5mW。
