Liu G X, Liu A, Meng Y, Shan F K, Shin B C, Lee W J, Cho C R
J Nanosci Nanotechnol. 2015 Mar;15(3):2185-91. doi: 10.1166/jnn.2015.10228.
Ultra-thin ZrOx thin films on Si substrates were prepared by sol-gel technique and processed with different methods (baked on hot plate at 150 °C, annealed at 500 °C in furnace, and photo-annealed under UV light). The decomposition of the organic groups and the formation of Zr-O bonding in the ZrOx thin films were confirmed by Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy. It is found that the ZrOx thin film annealed under UV light shows decent characteristics, including an ultra-small surface roughness, a low leakage current density of 10(-9) A/cm2 at 1 MV/cm, a large breakdown electric field of 9.5 MV/cm, and a large areal capacitance of 775 nF/cm2.
采用溶胶-凝胶技术在硅衬底上制备了超薄ZrOx薄膜，并采用不同方法进行处理（在150℃热板上烘烤、在炉中500℃退火以及在紫外光下光退火）。通过傅里叶变换红外光谱和X射线光电子能谱证实了ZrOx薄膜中有机基团的分解和Zr-O键的形成。结果发现，在紫外光下退火的ZrOx薄膜表现出良好的特性，包括极小的表面粗糙度、在1 MV/cm下10(-9) A/cm2的低漏电流密度、9.5 MV/cm的大击穿电场以及775 nF/cm2的大面电容。
