Lee Ji-Won, Koh Jung-Hyuk
J Nanosci Nanotechnol. 2015 Mar;15(3):2300-4. doi: 10.1166/jnn.2015.10254.
Fabrication of microwave band-pass filter with coplanar waveguide with ground structure was realized by employing Al2O3-polytetrafluoroethylene (Al2O3-PTFE) composite thick films for integrated substrates produced by aerosol deposition (AD). In order to predict the performance of the band-pass filter, 3-D electromagnetic simulations were performed by high-frequency structure analysis. The thick Al2O3-PTFE composite films prepared by the AD process had submicron-sized Al2O3 crystallites due to the shock-absorbing effect of PTFE during the film growth. The thick films were characterized by X-ray diffraction and scanning electron microscopy. The Cu transmission lines with the thickness of 300 nm were deposited by electron-beam evaporation to form the band-pass filter. The fabricated band-pass filter showed similar characteristics to the simulation results. The insertion loss and resonance frequency were 9.5 dB and 2.3 GHz, respectively.
通过采用气溶胶沉积（AD）制备的集成基板的Al2O3-聚四氟乙烯（Al2O3-PTFE）复合厚膜，实现了具有接地结构的共面波导微波带通滤波器的制造。为了预测带通滤波器的性能，通过高频结构分析进行了三维电磁模拟。由于PTFE在薄膜生长过程中的减震作用，通过AD工艺制备的厚Al2O3-PTFE复合薄膜具有亚微米尺寸的Al2O3微晶。通过X射线衍射和扫描电子显微镜对厚膜进行了表征。通过电子束蒸发沉积厚度为300nm的Cu传输线以形成带通滤波器。所制造的带通滤波器显示出与模拟结果相似的特性。插入损耗和共振频率分别为9.5dB和2.3GHz。
