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采用气溶胶沉积法制备用于红外传感器的YBa2Cu3O6+x半导体。

YBa2Cu3O6+xSemiconductors Fabricated Using the Aerosol Deposition Method for IR Sensors.

作者信息

Jung Hye-Rin, Lee Tae-He, Lee Sung-Gap

出版信息

J Nanosci Nanotechnol. 2015 Mar;15(3):2409-12. doi: 10.1166/jnn.2015.10246.

DOI:10.1166/jnn.2015.10246
PMID:26413677
Abstract

In this study, YBa2Cu306+x (YBCO) thick films were investigated for their application in uncooled microbolometers. YBCO powders were prepared using the conventional mixed oxide method and were deposited on an SiO2/Si substrate using the aerosol deposition method (ADM) at room temperature. As a result of thermogravimetry and differential thermal analysis (TG-DTA) of YBCO powder, an endothermic peak was observed at approximately 820 °C. The powder was calcined at 880 °C. The deposited film were annealed at 600-750 °C (O2:Ar = 1:1, pO2) and their structural and electrical properties were investigated at varying annealing temperatures. From X-ray diffraction (XRD) results, all films displayed the typical XRD patterns of the tetragonal phase and the second phase was observed. The thickness of all the YBCO thick films was approximately 15.7 µm. As a result of the temperature coefficient of resistance (TCR = 1/R * dR/dT), the YBCO thick films annealed at 700 °C showed the maximum value of -3.1%/°C and all YBCO thick films showed typical NTCR (negative temperature coefficient of resistance) properties, displaying decreased electrical resistance with an increase in temperature.

摘要

在本研究中,对钇钡铜氧(YBCO)厚膜在非制冷微测辐射热计中的应用进行了研究。采用传统的混合氧化物法制备了YBCO粉末,并在室温下使用气溶胶沉积法(ADM)将其沉积在SiO₂/Si衬底上。对YBCO粉末进行热重分析和差示热分析(TG-DTA)的结果显示,在约820℃处观察到一个吸热峰。该粉末在880℃下煅烧。将沉积的薄膜在600 - 750℃(O₂:Ar = 1:1,pO₂)下退火,并在不同的退火温度下研究其结构和电学性能。从X射线衍射(XRD)结果来看,所有薄膜均呈现出四方相的典型XRD图谱,且观察到了第二相。所有YBCO厚膜的厚度约为15.7μm。根据电阻温度系数(TCR = 1/R * dR/dT),在700℃退火的YBCO厚膜显示出-3.1%/℃的最大值,并且所有YBCO厚膜均表现出典型的负温度系数电阻(NTCR)特性,即随着温度升高电阻降低。

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