Berg Alexander, Lenrick Filip, Vainorius Neimantas, Beech Jason P, Wallenberg L Reine, Borgström Magnus T
Solid State Physics, Lund University, Box 118, S-221 00, Lund, Sweden.
Nanotechnology. 2015 Oct 30;26(43):435601. doi: 10.1088/0957-4484/26/43/435601. Epub 2015 Oct 7.
Ternary nanowires (NWs) often exhibit varying material composition along the NW growth axis because of different diffusion properties of the precursor molecules. This constitutes a problem for optoelectronic devices for which a homogeneous material composition is most often of importance. Especially, ternary GaInP NWs grown under a constant Ga-In precursor ratio typically show inhomogeneous material composition along the length of the NW due to the complexity of low temperature precursor pyrolysis and relative rates of growth species from gas phase diffusion and surface diffusion that contribute to synthesis of particle-assisted growth. Here, we present the results of a method to overcome this challenge by in situ tuning of the trimethylindium molar fraction during growth of ternary Zn-doped GaInP NWs. The NW material compositions were determined by use of x-ray diffraction, scanning transmission electron microscopy and energy dispersive x-ray spectroscopy and the optical properties by photoluminescence spectroscopy.
由于前驱体分子具有不同的扩散特性，三元纳米线（NWs）通常沿NW生长轴呈现出变化的材料组成。这对于光电器件而言是个问题，因为均匀的材料组成通常至关重要。特别是，在恒定的Ga-In前驱体比例下生长的三元GaInP NWs，由于低温前驱体热解的复杂性以及气相扩散和表面扩散对粒子辅助生长合成有贡献的生长物种的相对速率，通常沿NW长度显示出不均匀的材料组成。在此，我们展示了一种通过在三元Zn掺杂GaInP NWs生长过程中原位调节三甲基铟摩尔分数来克服这一挑战的方法的结果。NW材料组成通过X射线衍射、扫描透射电子显微镜和能量色散X射线光谱测定，光学性质通过光致发光光谱测定。
