Lund University, Solid State Physics and the Nanometer Structure Consortium, Box 118, SE-22100 Lund, Sweden.
Nanotechnology. 2012 Jun 22;23(24):245601. doi: 10.1088/0957-4484/23/24/245601. Epub 2012 May 28.
Non-tapered vertically straight Ga(x)In(1-x)P nanowires were grown in a compositional range from Ga(0.2)In(0.8)P to pure GaP in particle-assisted mode by controlling the trimethylindium, trimethylgallium and hydrogen chloride flows in metal-organic vapor phase epitaxy. X-ray energy dispersive spectroscopy in transmission electron microscopy revealed homogeneous radial material composition in single nanowires, whereas variations in the material composition were found along the nanowires. High-resolution x-ray diffraction indicates a variation of the material composition on the order of about 19% measuring an entire sample area, i.e., including edge effects during growth. The non-capped nanowires emit room temperature photoluminescence strongly in the energy range of 1.43-2.16 eV, correlated with the bandgap expected from the material composition.
非锥形直 Ga(x)In(1-x)P 纳米线在颗粒辅助模式下通过控制金属有机气相外延中的三甲基铟、三甲基镓和氯化氢流量，在 Ga(0.2)In(0.8)P 到纯 GaP 的组成范围内生长。透射电子显微镜中的 X 射线能量色散光谱显示，单个纳米线的径向材料组成均匀，而沿纳米线则存在材料组成的变化。高分辨率 X 射线衍射表明，整个样品区域的材料组成变化约为 19%，即包括生长过程中的边缘效应。无帽纳米线在室温下强烈发射 1.43-2.16eV 的光致发光，与预期的材料组成相关的能带隙相吻合。
