Liang Yuan, Yu Hao, Zhang Hao Chi, Yang Chang, Cui Tie Jun
School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798.
School of Information Science and Engineering, and State Key Laboratory of Millimeter Waves, Southeast University, China 210018.
Sci Rep. 2015 Oct 8;5:14853. doi: 10.1038/srep14853.
A low-loss and low-crosstalk surface-wave transmission line (T-line) is demonstrated at sub-THz in CMOS. By introducing periodical sub-wavelength structures onto the metal transmission line, surface plasmon polaritons (SPP) are excited and propagate signals via a strongly localized surface wave. Two coupled SPP T-lines and two quasi-TEM T-lines are both fabricated on-chip, each with a separation distance of 2.4 μm using standard 65 nm CMOS technology. Measurement results show that the SPP T-lines achieve wideband reflection coefficient lower than -14 dB and crosstalk ratio better than -24 dB, which is 19 dB lower on average than the traditional T-lines from 220 GHz to 325 GHz. The demonstrated compact and wideband SPP T-lines have shown great potential for future realization of highly dense on-chip sub-THz communications in CMOS.
在互补金属氧化物半导体（CMOS）工艺中，展示了一种在亚太赫兹频段具有低损耗和低串扰的表面波传输线（T线）。通过在金属传输线上引入周期性亚波长结构，表面等离激元极化子（SPP）被激发，并通过强局域表面波来传播信号。两条耦合的SPP T线和两条准横向电磁（quasi-TEM）T线均在芯片上制造，使用标准65纳米CMOS技术，每条线的间距为2.4微米。测量结果表明，SPP T线实现了低于-14分贝的宽带反射系数和优于-24分贝的串扰比，在220吉赫兹至325吉赫兹频段，平均比传统T线低19分贝。所展示的紧凑且宽带的SPP T线在未来实现CMOS中高密度片上亚太赫兹通信方面显示出巨大潜力。
