Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, CA, 94025, USA.
Department of Advanced Materials Science, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba, 277-8561, Japan.
Adv Mater. 2015 Dec 2;27(45):7458-61. doi: 10.1002/adma.201503339. Epub 2015 Oct 27.
The Schottky barrier heights at the Pt/TiO2 (001) junctions are modulated over 0.8 eV by inserting <1 nm of LaAlO3. The large electric field in the LaAlO3 is stabilized by preserving the continuity of in-plane lattice symmetry at the oxide interface. These results greatly expand the application of dipole engineering to versatile polycrystalline metal/binary oxide functional interfaces.
通过插入<1nm 的 LaAlO3,Pt/TiO2(001)结处的肖特基势垒高度可调制 0.8eV。在氧化物界面处保持面内晶格对称性的连续性,稳定了 LaAlO3 中的大电场。这些结果极大地扩展了偶极子工程在多功能多晶金属/二元氧化物功能界面中的应用。