School of Chemical, Biological and Environmental Engineering, Oregon State University , Corvallis, Oregon 97331, United States.
Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory , Richland, Washington 99352, United States.
ACS Appl Mater Interfaces. 2018 Jan 31;10(4):4333-4340. doi: 10.1021/acsami.7b18674. Epub 2018 Jan 18.
A method to understand the role of interfacial chemistry on the modulation of Schottky barrier heights for platinum and amorphous indium gallium zinc oxide (a-IGZO) interfaces is demonstrated through thermal processing and background ambient pressure control. In situ X-ray photoelectron spectroscopy was used to characterize the interfacial chemistries that modulate barrier heights in this system. The primary changes were a significant chemical reduction of indium, from In to In, that occurs during deposition of Pt on to the a-IGZO surface in ultrahigh vacuum. Postannealing and controlling the background ambient O pressure allows further tuning of the reduction of indium and the corresponding Schottky barrier heights from 0.17 to 0.77 eV. Understanding the detailed interfacial chemistries at Pt/a-IGZO interfaces may allow for improved electronic device performance, including Schottky diodes, memristors, and metal-semiconductor field-effect transistors.
通过热处理和背景环境压力控制，展示了一种理解界面化学在调节铂和非晶铟镓锌氧化物(a-IGZO)界面肖特基势垒高度方面作用的方法。原位 X 射线光电子能谱用于表征调节该体系中势垒高度的界面化学。在超高真空下，Pt 沉积在 a-IGZO 表面上时，主要的变化是铟的显著化学还原，从 In 到 In。退火后控制背景环境 O 压力可以进一步调节铟的还原和相应的肖特基势垒高度，从 0.17 到 0.77eV。了解 Pt/a-IGZO 界面的详细界面化学可能会提高电子器件的性能，包括肖特基二极管、忆阻器和金属-半导体场效应晶体管。
