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使用羟乙基封端的聚(3-己基噻吩)作为活性层的有机薄膜晶体管器件的性能增强

Enhanced Performance of Organic Thin Film Transistor Devices Using Hydroxyethyl-Terminated P3HT as the Active Layer.

作者信息

Yeh Je-Yuan, Tsiang Raymond Chien-Chao

出版信息

J Nanosci Nanotechnol. 2015 May;15(5):3652-61. doi: 10.1166/jnn.2015.9512.

Abstract

Hydroxyethyl-terminated poly(3-hexylthiophene) (P3HT-OH) have been synthesized via a catalyst-transfer polycondensation using Grignard metathesis mediated by a nickel-based catalyst. This hydrophilic P3HT-OH is compared against the hydrophobic P3HT when used as an active layer on silicon dioxide (SiO2) wafer for organic thin-film-transistor (OTFT) fabrication. Hydroxyl groups at a 7.5% weight content lead to more chain regularity when polymer is bonded to SiO2 wafer surface and thus enhance the performance of OTFT Device, such as an 114.2% increase in ON/OFF ratio, an 12.4% increase in mobility, a 23.3% decrease in threshold voltage and a 30.1% decrease in surface roughness. Analysis and measurements reported in this paper have illustrated for the first time the feasibility of imparting hydrophilicity to the active layer for improving the OTFT performance.

摘要

通过使用镍基催化剂介导的格氏复分解反应,经由催化转移缩聚反应合成了羟基封端的聚(3-己基噻吩)(P3HT-OH)。当用作在二氧化硅(SiO2)晶圆上制造有机薄膜晶体管(OTFT)的有源层时,将这种亲水性P3HT-OH与疏水性P3HT进行了比较。当聚合物与SiO2晶圆表面结合时,重量含量为7.5%的羟基会使链的规整性更高,从而提高OTFT器件的性能,例如开/关比提高114.2%,迁移率提高12.4%,阈值电压降低23.3%,表面粗糙度降低30.1%。本文报道的分析和测量首次证明了赋予有源层亲水性以改善OTFT性能的可行性。

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