a 轴 GaN 纳米带中压电器件和压光电器件效应的温度依赖性。
Temperature Dependence of the Piezotronic and Piezophototronic Effects in a-axis GaN Nanobelts.
机构信息
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332-0245, USA.
Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices, South China Normal University, Guangzhou, 510631, China.
出版信息
Adv Mater. 2015 Dec 22;27(48):8067-74. doi: 10.1002/adma.201504534. Epub 2015 Oct 29.
The temperature dependence of the piezotronic and piezophototronic effects in a-axis GaN nanobelts from 77 to 300 K is investigated. The piezotronic effect is enhanced by over 440% under lower temp-eratures. Two independent processes are discovered to form a competing mechanism through the investigation of the temperature dependence of the piezophototronic effect in a-axis GaN nanobelts.
研究了 77 到 300 K 温度范围内 a 轴 GaN 纳米带的压电器件和压光电器件效应的温度依赖性。在较低温度下，压电器件效应增强超过 440%。通过研究 a 轴 GaN 纳米带的压光电器件效应的温度依赖性，发现了两种独立的过程，形成了竞争机制。
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