School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0245, USA.
Adv Mater. 2012 Jul 10;24(26):3532-7. doi: 10.1002/adma.201201020. Epub 2012 Apr 30.
The transport properties of GaN nanobelts (NBs) are tuned using a piezotronic effect when a compressive/tensile strain is applied on the GaN NB. This is mainly due to a change in Schottky barrier height (SBH). A theoretical model is proposed to explain the observed phenomenon.
当在 GaN 纳米带（NB）上施加压缩/拉伸应变时，通过压电器效应可以调节 GaN NB 的输运性质。这主要是由于肖特基势垒高度（SBH）的变化所致。提出了一个理论模型来解释观察到的现象。
