压电效应对用于有源柔性电子学的 GaN 纳米带输运性质的影响。
Piezotronic effect on the transport properties of GaN nanobelts for active flexible electronics.
机构信息
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0245, USA.
出版信息
Adv Mater. 2012 Jul 10;24(26):3532-7. doi: 10.1002/adma.201201020. Epub 2012 Apr 30.
PMID:22544827
Abstract
The transport properties of GaN nanobelts (NBs) are tuned using a piezotronic effect when a compressive/tensile strain is applied on the GaN NB. This is mainly due to a change in Schottky barrier height (SBH). A theoretical model is proposed to explain the observed phenomenon.
摘要
当在 GaN 纳米带（NB）上施加压缩/拉伸应变时，通过压电器效应可以调节 GaN NB 的输运性质。这主要是由于肖特基势垒高度（SBH）的变化所致。提出了一个理论模型来解释观察到的现象。
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