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使用二元溶剂混合物增强嵌段共聚物的定向自组装动力学。

Enhancing the Directed Self-assembly Kinetics of Block Copolymers Using Binary Solvent Mixtures.

机构信息

Global Frontier R&D Center for Hybrid Interface Materials (HIM), Busandaehak-ro 63beon-gil, Geumjeong-gu, Busan 609-735, Republic of Korea.

School of Materials Science and Engineering, Pusan National University (PNU) , Busandaehak-ro 63beon-gil, Geumjeong-gu, Busan 609-735, Republic of Korea.

出版信息

ACS Appl Mater Interfaces. 2015 Nov 25;7(46):25843-50. doi: 10.1021/acsami.5b08162. Epub 2015 Nov 10.

DOI:10.1021/acsami.5b08162
PMID:26517005
Abstract

The rapid pattern formation of well-ordered block copolymer (BCP) nanostructures is practical for next-generation nanolithography applications. However, there remain critical hurdles to achieve the rapid self-assembly of BCPs with a high Flory-Huggins interaction parameter (χ), owing to their slow kinetics. In this article, we report that a binary solvent vapor annealing methodology can significantly accelerate the self-assembly kinetics of poly(dimethylsiloxane-b-styrene) (PDMS-b-PS) BCPs with a high-χ. In particular, we systemically analyzed the effects of the mixing ratio of a binary solvent composed of a PDMS-selective solvent (heptane) and a PS-selective solvent (toluene), showing an ultrafast self-assembly time (≤1 min) to obtain a well-ordered nanostructure. Moreover, we successfully accomplished extremely fast generation of sub-20 nm dot patterns within an annealing time of 10 s in a 300 nm-wide trench by means of binary solvent annealing. We believe that these results are also applicable to other solvent-based annealing systems of BCPs and that they will contribute to the realization of next-generation ultrafine lithography applications.

摘要

有序嵌段共聚物(BCP)纳米结构的快速图案形成对于下一代纳米光刻应用具有实际意义。然而,由于其动力学缓慢,对于具有高 Flory-Huggins 相互作用参数(χ)的 BCP 实现快速自组装仍然存在关键障碍。在本文中,我们报告了二元溶剂蒸汽退火方法可以显著加速具有高 χ 的聚二甲基硅氧烷-嵌段-苯乙烯(PDMS-b-PS)BCP 的自组装动力学。具体而言,我们系统地分析了由 PDMS 选择性溶剂(庚烷)和 PS 选择性溶剂(甲苯)组成的二元溶剂的混合比的影响,结果表明超快的自组装时间(≤1 分钟)可以获得有序的纳米结构。此外,我们通过二元溶剂退火成功地在 10 秒内完成了在 300nm 宽沟槽中小于 20nm 点图案的快速生成。我们相信这些结果也适用于其他基于溶剂的 BCP 退火系统,它们将有助于实现下一代超精细光刻应用。

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