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UV-溶剂退火处理 PDMS 为主和 PS 为主的 PS-b-PDMS 嵌段共聚物薄膜。

UV-solvent annealing of PDMS-majority and PS-majority PS-b-PDMS block copolymer films.

机构信息

Department of Materials Science and Engineering, MIT, Cambridge MA 02139, USA. Semiconductor R&D Center, Samsung Electronics, Hwasung-City, Gyeonggi-do, Korea.

出版信息

Nanotechnology. 2016 Nov 18;27(46):465301. doi: 10.1088/0957-4484/27/46/465301. Epub 2016 Oct 13.

Abstract

The response of polystyrene-block-poly(dimethylsiloxane) (PS-b-PDMS) thin films to UV exposure during solvent vapor annealing is described, in order to improve their applicability in nanolithography and nanofabrication. Two BCPs were examined, one with the PS block as majority (f  = 68%, M  = 53 kg mol), the other with PDMS block as majority (f  = 67%, M  = 44 kg mol). A 5 min UV irradiation was applied during solvent vapor annealing which led to both partial crosslinking of the polymer and a small increase in the temperature of the annealing chamber. This approach was effective for improving the correlation length of the self-assembled microdomain arrays and in limiting subsequent flow of the PDMS in the PDMS-majority BCP to preserve the post-anneal morphology. Ordering and orientation of microdomains were controlled by directed self-assembly of the BCPs in trench substrates. Highly-ordered perpendicular nanochannel arrays were obtained in the PDMS-majority BCP.

摘要

描述了聚(苯乙烯-嵌-聚二甲基硅氧烷)(PS-b-PDMS)薄膜在溶剂蒸气退火过程中对 UV 暴露的响应,以提高其在纳米光刻和纳米制造中的适用性。研究了两种嵌段共聚物,一种以 PS 嵌段为主(f = 68%,M = 53 kg/mol),另一种以 PDMS 嵌段为主(f = 67%,M = 44 kg/mol)。在溶剂蒸气退火过程中施加 5 分钟的 UV 照射,导致聚合物部分交联和退火室温度略有升高。这种方法有效地提高了自组装微区阵列的相关长度,并限制了 PDMS 在 PDMS 为主的嵌段共聚物中的后续流动,以保持退火后的形态。通过在沟槽衬底中定向自组装控制微区的取向和排列。在 PDMS 为主的嵌段共聚物中获得了高度有序的垂直纳米通道阵列。

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