Department of Applied Physics Eindhoven, University of Technology , 5600 MB Eindhoven, The Netherlands.
Instituto de Física "Gleb Wataghin", Universidade Estadual de Campinas, UNICAMP , 13083-859 Campinas, São Paulo, Brazil.
Nano Lett. 2015 Dec 9;15(12):8062-9. doi: 10.1021/acs.nanolett.5b03484. Epub 2015 Nov 9.
The growth of wurtzite/zincblende (WZ and ZB, respectively) superstructures opens new avenues for band structure engineering and holds the promise of digitally controlling the energy spectrum of quantum confined systems. Here, we study growth kinetics of pure and thus defect-free WZ/ZB homostructures in GaP nanowires with the aim to obtain monolayer control of the ZB and WZ segment lengths. We find that the Ga concentration and the supersaturation in the catalyst particle are the key parameters determining growth kinetics. These parameters can be tuned by the gallium partial pressure and the temperature. The formation of WZ and ZB can be understood with a model based on nucleation either at the triple phase line for the WZ phase or in the center of the solid-liquid interface for the ZB phase. Furthermore, the observed delay/offset time needed to induce WZ and ZB growth after growth of the other phase can be explained within this framework.
纤锌矿/闪锌矿（分别为 WZ 和 ZB）超结构的生长为能带结构工程开辟了新途径，并有望实现对量子限制系统能谱的数字控制。在这里，我们研究了 GaP 纳米线中纯（即无缺陷）WZ/ZB 同型结构的生长动力学，目的是获得对 ZB 和 WZ 段长度的单层控制。我们发现，Ga 浓度和催化剂颗粒中的过饱和度是决定生长动力学的关键参数。这些参数可以通过 Ga 分压和温度来调节。基于在 WZ 相的三相线处或在 ZB 相的固-液界面中心处进行成核的模型，可以理解 WZ 和 ZB 的形成。此外，在这个框架内可以解释在生长另一个相之后诱导 WZ 和 ZB 生长所需的观察到的延迟/偏移时间。
