Lozano Miguel Sinusia, Gómez Víctor J
Nanophotonics Technology Center, Universitat Politècnica de València, Camino de Vera s/n Building 8F, 2a Floor 46022 Valencia Spain
Nanoscale Adv. 2023 Mar 6;5(7):1890-1909. doi: 10.1039/d2na00956k. eCollection 2023 Mar 28.
Crystal phase quantum dots (QDs) are formed during the axial growth of III-V semiconductor nanowires (NWs) by stacking different crystal phases of the same material. In III-V semiconductor NWs, both zinc blende (ZB) and wurtzite (WZ) crystal phases can coexist. The band structure difference between both crystal phases can lead to quantum confinement. Thanks to the precise control in III-V semiconductor NW growth conditions and the deep knowledge on the epitaxial growth mechanisms, it is nowadays possible to control, down to the atomic level, the switching between crystal phases in NWs forming the so-called crystal phase NW-based QDs (NWQDs). The shape and size of the NW bridge the gap between QDs and the macroscopic world. This review is focused on crystal phase NWQDs based on III-V NWs obtained by the bottom-up vapor-liquid-solid (VLS) method and their optical and electronic properties. Crystal phase switching can be achieved in the axial direction. In contrast, in the core/shell growth, the difference in surface energies between different polytypes can enable selective shell growth. One reason for the very intense research in this field is motivated by their excellent optical and electronic properties both appealing for applications in nanophotonics and quantum technologies.
晶体相量子点（QDs）是在III-V族半导体纳米线（NWs）的轴向生长过程中，通过堆叠同一材料的不同晶体相而形成的。在III-V族半导体纳米线中，闪锌矿（ZB）和纤锌矿（WZ）晶体相可以共存。两种晶体相之间的能带结构差异会导致量子限制。由于对III-V族半导体纳米线生长条件的精确控制以及对外延生长机制的深入了解，如今已能够在原子水平上控制形成所谓基于晶体相纳米线的量子点（NWQDs）的纳米线中晶体相之间的转换。纳米线的形状和尺寸弥合了量子点与宏观世界之间的差距。本综述聚焦于通过自下而上的气-液-固（VLS）方法获得的基于III-V族纳米线的晶体相NWQDs及其光学和电子性质。晶体相转换可以在轴向实现。相比之下，在核/壳生长中，不同多型体之间表面能的差异可以实现选择性壳生长。该领域研究非常活跃的一个原因是它们具有优异的光学和电子性质，这对纳米光子学和量子技术的应用都很有吸引力。
