在高迁移率有机晶体管中提取载流子迁移率。
On the Extraction of Charge Carrier Mobility in High-Mobility Organic Transistors.
机构信息
Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba, 277-8561, Japan.
The Institute of Scientific and Industrial Research (ISIR), Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka, 567-0047, Japan.
出版信息
Adv Mater. 2016 Jan 6;28(1):151-5. doi: 10.1002/adma.201503133. Epub 2015 Nov 6.
Transistor parameter extraction by the conventional transconductance method can lead to a mobility overestimate. Organic transistors undergoing major contact resistance experience a significant drop in mobility upon mild annealing. Before annealing, strong field-dependent contact resistance yields nonlinear transfer curves with locally high transconductances, resulting in a mobility overestimate. After annealing, a contact resistance below 200 Ω cm is achieved, which is stable over a wide V(G) range.
通过传统的跨导法进行晶体管参数提取可能会导致迁移率高估。经历主要接触电阻的有机晶体管在轻度退火后迁移率会显著下降。在退火之前，强场相关的接触电阻会产生具有局部高跨导的非线性转移曲线，从而导致迁移率高估。退火后，接触电阻可达到 200 Ω cm 以下，在宽 V(G)范围内稳定。
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