Kitahara Gyo, Inoue Satoru, Higashino Toshiki, Ikawa Mitsuhiro, Hayashi Taichi, Matsuoka Satoshi, Arai Shunto, Hasegawa Tatsuo
Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan.
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8560, Japan.
Sci Adv. 2020 Oct 7;6(41). doi: 10.1126/sciadv.abc8847. Print 2020 Oct.
Meniscus, a curvature of droplet surface around solids, takes critical roles in solution-based thin-film processing. Extension of meniscus shape, and eventual uniform film growth, is strictly limited on highly lyophobic surfaces, although such surface should considerably improve switching characteristics. Here, we demonstrate a technique to control the solution meniscus, allowing to manufacture single-crystalline organic semiconductor (OSC) films on the highest lyophobic amorphous perfluoropolymer, Cytop. We used U-shaped metal film pattern produced on the Cytop surface, to initiate OSC film growth and to keep the meniscus extended on the Cytop surface. The growing edge of the OSC film helped maintain the meniscus extension, leading to a successive film growth. This technique facilitates extremely sharp switching transistors with a subthreshold swing of 63 mV dec owing to the effective elimination of charge traps at the semiconductor/dielectric interface. The technique should expand the capability of print production of functional films and devices.
弯月面是固体周围液滴表面的一种曲率,在基于溶液的薄膜加工中起着关键作用。尽管高度疏液表面应能显著改善开关特性,但弯月面形状的扩展以及最终均匀薄膜的生长在这种表面上受到严格限制。在此,我们展示了一种控制溶液弯月面的技术,能够在疏液性最强的非晶态全氟聚合物Cytop上制造单晶有机半导体(OSC)薄膜。我们利用在Cytop表面制作的U形金属薄膜图案来引发OSC薄膜生长,并使弯月面在Cytop表面保持扩展。OSC薄膜的生长边缘有助于维持弯月面的扩展,从而实现连续的薄膜生长。由于有效消除了半导体/电介质界面处的电荷陷阱,该技术有助于制造亚阈值摆幅为63 mV/dec的极其锐利的开关晶体管。该技术应能扩展功能性薄膜和器件的印刷生产能力。