Li Haoyuan, Brédas Jean-Luc
School of Chemistry and Biochemistry, and Center for Organic Photonics and Electronics, Georgia Institute of Technology, Atlanta, GA 30332, USA.
Natl Sci Rev. 2020 Jul 18;8(4):nwaa167. doi: 10.1093/nsr/nwaa167. eCollection 2021 Apr.
Organic field-effect transistors (OFETs) are not only functional devices but also represent an important tool for measuring the charge-transport properties of organic semiconductors (OSs). Thus, efforts to understand the performance and characteristics of OFET devices are not only useful in helping achieve higher device efficiencies but also critical to ensuring accuracy in the evaluations of OS charge mobilities. These studies rely on OFET device models, which connect the measured current characteristics to the properties of the OSs. Developing such OFET models requires good knowledge of the charge-transport processes in OSs. In device active layers, the OS thin films are either amorphous (e.g. in organic light-emitting diodes and organic solar cells) or crystalline (e.g. those optimized for charge transport in OFETs). When the electronic couplings between adjacent OS molecules or polymer chain segments are weak, the charge-transport mechanism is dominated by hopping processes, which is the context in which we frame the discussion in this Review. Factors such as disorder, mobility anisotropy, traps, grain boundaries or film morphology all impact charge transport. To take these features fully into account in an OFET device model requires considering a nano-scale, molecular-level resolution. Here, we discuss the recent development of such molecular-resolution OFET models based on a kinetic Monte Carlo approach relevant to the hopping regime. We also briefly describe the applicability of these models to high-mobility OFETs, where we underline the need to extend them to incorporate aspects related to charge delocalization.
有机场效应晶体管(OFET)不仅是功能性器件,也是测量有机半导体(OS)电荷传输特性的重要工具。因此,了解OFET器件的性能和特性不仅有助于提高器件效率,对于确保OS电荷迁移率评估的准确性也至关重要。这些研究依赖于OFET器件模型,该模型将测量的电流特性与OS的特性联系起来。开发此类OFET模型需要深入了解OS中的电荷传输过程。在器件有源层中,OS薄膜要么是非晶态的(例如在有机发光二极管和有机太阳能电池中),要么是晶体态的(例如那些为OFET中的电荷传输而优化的薄膜)。当相邻OS分子或聚合物链段之间的电子耦合较弱时,电荷传输机制主要由跳跃过程主导,这就是我们在本综述中进行讨论的背景。无序、迁移率各向异性、陷阱、晶界或薄膜形态等因素都会影响电荷传输。要在OFET器件模型中充分考虑这些特征,需要考虑纳米尺度、分子水平的分辨率。在此,我们讨论基于与跳跃机制相关的动力学蒙特卡罗方法的此类分子分辨率OFET模型的最新进展。我们还简要描述了这些模型在高迁移率OFET中的适用性,在此我们强调需要扩展这些模型以纳入与电荷离域相关的方面。