Li Liang, Yang Youwen, Huang Xiaohu, Li Guanghai, Zhang Lide
Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, People's Republic of China.
Nanotechnology. 2006 Mar 28;17(6):1706-12. doi: 10.1088/0957-4484/17/6/027. Epub 2006 Feb 27.
Thermoelectric material Bi2Te3 nanowire arrays have been successfully prepared by pulsed electrochemical deposition into the nanochannels of porous anodic alumina membranes. X-ray diffraction analyses show that the as-synthesized nanowires have a highly preferential orientation. Scanning electron microscopy, transmission electron microscopy, and high-resolution transmission electron microscopy observations indicate that the high-filling-rate and uniform Bi2Te3 nanowires are single crystalline. Energy dispersive spectrometer analyses indicate that the compositions of the nanowires can be controlled by changing the potentials and the solution concentrations. The electrical resistance measurements indicate that the resistances increase with decreasing temperature and show a typical semiconductor characteristic. The growth mechanism is discussed together with the electrochemical deposition process studies.
通过脉冲电化学沉积法成功地在多孔阳极氧化铝膜的纳米通道中制备了热电材料Bi2Te3纳米线阵列。X射线衍射分析表明，合成的纳米线具有高度择优取向。扫描电子显微镜、透射电子显微镜和高分辨率透射电子显微镜观察表明，高填充率且均匀的Bi2Te3纳米线为单晶。能量色散谱仪分析表明，通过改变电位和溶液浓度可以控制纳米线的组成。电阻测量表明，电阻随温度降低而增加，呈现典型的半导体特性。结合电化学沉积过程研究对生长机理进行了讨论。
