Manzano Cristina V, Polyakov Mikhail N, Maiz Jon, Aguirre Myriam H, Maeder Xavier, Martín-González Marisol
Instituto de Micro y Nanotecnología, IMN-CNM, CSIC (CEI UAM+CSIC) Isaac Newton, 8, E-28760, Tres Cantos, Spain.
Laboratory for Mechanics of Materials and Nanostructures, Empa, Swiss Federal Laboratories for Materials Science and Technology, Thun, Switzerland.
Sci Technol Adv Mater. 2019 Sep 25;20(1):1022-1030. doi: 10.1080/14686996.2019.1671778. eCollection 2019.
BiTe nanowires with diameters ranging from 25 to 270 nm, ultra-high aspect ratio, and uniform growth front were fabricated by electrodeposition, pulsing between zero current density during the time and constant potential during the time (pulsed-current-voltage method, p-IV). The use of zero current density during the time is to ensure no electrodeposition is carried out and the system is totally relaxed. By this procedure, stoichiometric nanowires oriented perpendicular to the is obtained for the different diameters of porous alumina templates. In addition, the samples show a uniform growth front with ultra-high aspect ratio single crystal nanowires. The high degree of crystallinity was verified by transmission electron backscatter diffraction. This characterization revealed that the nanowires present both large single crystalline areas and areas with alternating twin configurations.
通过电沉积制备了直径范围为25至270纳米、具有超高纵横比且生长前沿均匀的BiTe纳米线，即在沉积时间内电流密度为零，在沉积时间内保持恒定电位（脉冲电流-电压法，p-IV）。在沉积时间内使用零电流密度是为了确保不进行电沉积且系统完全松弛。通过该程序，对于不同直径的多孔氧化铝模板，可获得垂直于沉积方向取向的化学计量比纳米线。此外，样品显示出具有超高纵横比单晶纳米线的均匀生长前沿。通过透射电子背散射衍射验证了高结晶度。该表征表明，纳米线既存在大的单晶区域，也存在具有交替孪晶结构的区域。
