Yang Ye, Lin Jun
The College of Information, Mechanical and Electrical Engineering, Shanghai Normal University, Shanghai, China.
Scanning. 2016 Sep;38(5):412-420. doi: 10.1002/sca.21287. Epub 2015 Nov 24.
As one of the tip-based nanoscale machining methods, AFM-based nanolithography has been proved to be capable of fabricating nanostructures and devices on a wide range of materials by means of mechanical force, bias voltage, chemical reaction, etc. In this paper, we have compared the influences of the bias voltage effect and the force effect during the nanoscale AFM electric lithography on the metallic copper film surface respectively through the bias voltage dominating scheme and the contact force dominating scheme. The geometric sizes of the line structures and the area patterns fabricated under the two schemes with different parameter settings were compared to obtain the machining characteristics and mechanisms of the two distinct effects separately. The ratios of debris amount to the total material removal amount under the two schemes were quantitatively evaluated. Furthermore, both the arbitrary line structure with high aspect ratio and the area pattern with small surface roughness were fabricated under the appropriate scheme and parameter settings. This study is of great help to effectively achieve the desired nanoscale patterns by AFM electric lithography for their promising applications in the fabrication of various MEMS or NEMS devices. SCANNING 38:412-420, 2016. © 2015 Wiley Periodicals, Inc.
作为基于探针的纳米级加工方法之一，基于原子力显微镜（AFM）的纳米光刻技术已被证明能够通过机械力、偏置电压、化学反应等方式在多种材料上制造纳米结构和器件。在本文中，我们分别通过偏置电压主导方案和接触力主导方案，比较了纳米级AFM电光刻过程中偏置电压效应和力效应在金属铜膜表面的影响。比较了在两种具有不同参数设置的方案下制造的线结构和面积图案的几何尺寸，以分别获得两种不同效应的加工特性和机理。定量评估了两种方案下碎片量与总材料去除量的比率。此外，在适当的方案和参数设置下，制造出了具有高纵横比的任意线结构和具有小表面粗糙度的面积图案。这项研究对于通过AFM电光刻有效地实现所需的纳米级图案非常有帮助，因为它们在各种微机电系统（MEMS）或纳米机电系统（NEMS）器件的制造中具有广阔的应用前景。《扫描》38:412 - 420，2016年。© 2015威利期刊公司。
