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直接合成具有正交取向的垂直和水平排列层的大规模分层 MoS2 薄膜。

Direct synthesis of large-scale hierarchical MoS2 films nanostructured with orthogonally oriented vertically and horizontally aligned layers.

机构信息

Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics (SIOM), Chinese Academy of Sciences (CAS), Shanghai 201800, China.

State Key Laboratory of Advanced Optical Communication Systems and Networks, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, China.

出版信息

Nanoscale. 2016 Jan 7;8(1):431-9. doi: 10.1039/c5nr05938k.

DOI:10.1039/c5nr05938k
PMID:26620263
Abstract

Hierarchical MoS2 thin films nanostructured with orthogonally oriented vertically and horizontally aligned layers were designed and excellent passive Q-switching behavior in a fiber laser was demonstrated. A special solvothermal system containing a small amount of water was applied to synthesize such hierarchical MoS2 nanofilms, in which the reaction rate is carefully controlled by the diffusion rate of the sulfur precursor. Wafer-scale MoS2 thin films with hierarchical structures are formed on various substrates. Moreover, the hierarchical MoS2 thin films consisting of both vertical and horizontal layers can be tuned to possess only horizontally aligned layers by controlling the solvothermal time. To show the potential application proof-of-concept, the nonlinear optical performance of the hierarchical MoS2 was investigated. Superior passive Q-switching behavior in a fiber laser with a minimum pulse width of 2.2 μs was observed.

摘要

本文设计了具有正交取向的垂直和水平分层的分层 MoS2 薄膜纳米结构,并在光纤激光器中展示了优异的被动调 Q 性能。采用一种特殊的含有少量水的溶剂热体系来合成这种分层 MoS2 纳米薄膜,其中通过硫前体的扩散速率来仔细控制反应速率。在各种衬底上形成了具有分层结构的晶圆级 MoS2 薄膜。此外,通过控制溶剂热时间,分层的 MoS2 薄膜可以调谐为仅具有水平取向层。为了展示潜在的应用概念验证,研究了分层 MoS2 的非线性光学性能。在光纤激光器中观察到了具有最小脉冲宽度为 2.2 μs 的优异被动调 Q 性能。

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Direct synthesis of large-scale hierarchical MoS2 films nanostructured with orthogonally oriented vertically and horizontally aligned layers.直接合成具有正交取向的垂直和水平排列层的大规模分层 MoS2 薄膜。
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