含嵌入式纳米颗粒的磁性隧道结中的异常隧道磁电阻和自旋转移矩

Anomalous Tunnel Magnetoresistance and Spin Transfer Torque in Magnetic Tunnel Junctions with Embedded Nanoparticles.

作者信息

Useinov Arthur, Ye Lin-Xiu, Useinov Niazbeck, Wu Te-Ho, Lai Chih-Huang

机构信息

Department of Physics, National Tsing Hua University, Hsinchu, Taiwan.

Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan.

出版信息

Sci Rep. 2015 Dec 18;5:18026. doi: 10.1038/srep18026.

DOI:10.1038/srep18026

PMID:26681336

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC4683539/

Abstract

The tunnel magnetoresistance (TMR) in the magnetic tunnel junction (MTJ) with embedded nanoparticles (NPs) was calculated in range of the quantum-ballistic model. The simulation was performed for electron tunneling through the insulating layer with embedded magnetic and non-magnetic NPs within the approach of the double barrier subsystem connected in parallel to the single barrier one. This model can be applied for both MTJs with in-plane magnetization and perpendicular one. We also calculated the in-plane component of the spin transfer torque (STT) versus the applied voltage in MTJs with magnetic NPs and determined that its value can be much larger than in single barrier system (SBS) for the same tunneling thickness. The reported simulation reproduces experimental data of the TMR suppression and peak-like TMR anomalies at low voltages available in leterature.

摘要

在量子弹道模型范围内计算了嵌入纳米粒子（NPs）的磁性隧道结（MTJ）中的隧道磁电阻（TMR）。在与单势垒子系统并联连接的双势垒子系统的方法中，对电子隧穿通过嵌入磁性和非磁性NPs的绝缘层进行了模拟。该模型可应用于面内磁化和垂直磁化的MTJ。我们还计算了具有磁性NPs的MTJ中自旋转移扭矩（STT）的面内分量与施加电压的关系，并确定对于相同的隧穿厚度，其值可能比单势垒系统（SBS）中的值大得多。所报道的模拟再现了文献中可得的低电压下TMR抑制和峰状TMR异常的实验数据。