基于Co2Fe6B2/MgO的垂直磁隧道结中，隧道磁电阻比与Co2Fe6B2自由层和钉扎层纳米级厚度的相关性。
The dependency of tunnel magnetoresistance ratio on nanoscale thicknesses of Co2Fe6B2 free and pinned layers for Co2Fe6B2/MgO-based perpendicular-magnetic-tunnel-junctions.
作者信息
Jeon Min-Su, Chae Kyo-Suk, Lee Du-Yeong, Takemura Yasutaka, Lee Seung-Eun, Shim Tae-Hun, Park Jea-Gun
机构信息
MRAM Center, Department of Electronics, Hanyang University, Seoul, 133-791, Republic of Korea.
出版信息
Nanoscale. 2015 May 7;7(17):8142-8. doi: 10.1039/c5nr01140j.
The tunnel magnetoresistance (TMR) ratio of a cobalt-iron-boron (CoFeB)-based perpendicular-magnetic-tunnel-junction (p-MTJ) spin valve is extremely sensitive to both nanoscale Co2Fe6B2 free- and pinned-layer thicknesses. The TMR ratio peaks at a Co2Fe6B2 free-layer thickness of 1.05 nm, while it peaks at a Co2Fe6B2 pinned-layer thickness of 1.59 nm, achieving 104%. The amount of tantalum diffused into the MgO tunneling barrier (originated from a tantalum seed) decreases with increasing Co2Fe6B2 free-layer thickness, while the amount of palladium diffused from a [Co/Pd]n SyAF layer decreases with increasing Co2Fe6B2 pinned-layer thickness, determining the crystallinity of the MgO tunneling barrier and the TMR ratio. In addition, the TMR ratio tended to decrease when the Co2Fe6B2 free layer and the Co2Fe6B2 pinned layer switched characteristics from interface-perpendicular anisotropic to in-plane anisotropic.
基于钴铁硼（CoFeB）的垂直磁隧道结（p-MTJ）自旋阀的隧道磁电阻（TMR）比，对纳米级Co2Fe6B2自由层和钉扎层的厚度都极为敏感。当Co2Fe6B2自由层厚度为1.05 nm时，TMR比达到峰值；而当Co2Fe6B2钉扎层厚度为1.59 nm时，TMR比达到峰值，为104%。扩散到MgO隧道势垒中的钽（源自钽籽层）的量，随着Co2Fe6B2自由层厚度的增加而减少；而从[Co/Pd]n反铁磁层扩散的钯的量，随着Co2Fe6B2钉扎层厚度的增加而减少，这决定了MgO隧道势垒的结晶度和TMR比。此外，当Co2Fe6B2自由层和Co2Fe6B2钉扎层的特性从界面垂直各向异性转变为面内各向异性时，TMR比趋于下降。
Zotero 插件