Kotsuki Kenji, Obata Seiji, Saiki Koichiro
Department of Chemistry and ‡Department of Complexity Science and Engineering, The University of Tokyo , 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan.
Langmuir. 2016 Jan 19;32(2):644-9. doi: 10.1021/acs.langmuir.5b03975. Epub 2016 Jan 4.
We proposed a novel but facile method for growing organic semiconductor single-crystals via solvent vapor annealing (SVA) under electric field. In the conventional SVA growth process, nuclei of crystals appeared anywhere on the substrate and their crystallographic axes were randomly distributed. We applied electric field during the SVA growth of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) on the SiO2/Si substrate on which a pair of electrodes had been deposited beforehand. Real-time observation of the SVA process revealed that rodlike single crystals grew with their long axes parallel to the electric field and bridged the prepatterned electrodes. As a result, C8-BTBT crystals automatically formed a field effect transistor (FET) structure and the mobility reached 1.9 cm(2)/(V s). Electric-field-assisted SVA proved a promising method for constructing high-mobility single-crystal FETs at the desired position by a low-cost solution process.
我们提出了一种新颖且简便的方法,用于在电场作用下通过溶剂蒸汽退火(SVA)生长有机半导体单晶。在传统的SVA生长过程中,晶体核出现在衬底上的任何位置,且它们的结晶轴随机分布。我们在预先沉积了一对电极的SiO2/Si衬底上,对2,7-二辛基[1]苯并噻吩并[3,2-b][1]苯并噻吩(C8-BTBT)进行SVA生长时施加电场。对SVA过程的实时观察表明,棒状单晶沿着其长轴平行于电场的方向生长,并跨越预先图案化的电极。结果,C8-BTBT晶体自动形成了场效应晶体管(FET)结构,迁移率达到1.9 cm²/(V·s)。电场辅助SVA证明了一种通过低成本溶液工艺在所需位置构建高迁移率单晶FET的有前景的方法。