Département de Physique, Faculté des Sciences, Université Libre de Bruxelles CP223, Campus de la Plaine, 1050 Brussels, Belgium.
ACS Appl Mater Interfaces. 2015 Jan 28;7(3):1868-73. doi: 10.1021/am5075908. Epub 2015 Jan 17.
Substrate-induced phases (SIPs) are polymorphic phases that are found in thin films of a material and are different from the single crystal or "bulk" structure of a material. In this work, we investigate the presence of a SIP in the family of [1]benzothieno[3,2-b]benzothiophene (BTBT) organic semiconductors and the effect of aging and solvent vapor annealing on the film structure. Through extensive X-ray structural investigations of spin coated films, we find a SIP with a significantly different structure to that found in single crystals of the same material forms; the SIP has a herringbone motif while single crystals display layered π-π stacking. Over time, the structure of the film is found to slowly convert to the single crystal structure. Solvent vapor annealing initiates the same structural evolution process but at a greatly increased rate, and near complete conversion can be achieved in a short period of time. As properties such as charge transport capability are determined by the molecular structure, this work highlights the importance of understanding and controlling the structure of organic semiconductor films and presents a simple method to control the film structure by solvent vapor annealing.
衬底诱导相 (SIP) 是在材料的薄膜中发现的多晶相,与材料的单晶或“体相”结构不同。在这项工作中,我们研究了 [1]苯并噻吩并[3,2-b]苯并噻吩 (BTBT) 有机半导体家族中 SIP 的存在,以及老化和溶剂蒸汽退火对薄膜结构的影响。通过对旋涂薄膜进行广泛的 X 射线结构研究,我们发现 SIP 的结构与同一种材料的单晶中发现的结构有很大的不同;SIP 具有鱼骨状图案,而单晶则显示出层状 π-π 堆积。随着时间的推移,薄膜的结构被发现会缓慢转化为单晶结构。溶剂蒸汽退火会引发相同的结构演变过程,但速度大大加快,在短时间内可以实现近乎完全的转化。由于电荷输运能力等性质取决于分子结构,这项工作强调了理解和控制有机半导体薄膜结构的重要性,并提出了一种通过溶剂蒸汽退火控制薄膜结构的简单方法。