Jagadeeswararao Metikoti, Pal Somnath, Nag Angshuman, Sarma D D
Department of Chemistry, Indian Institute of Science Education and Research (IISER), Pune, 411008, India.
Solid State and Structural Chemistry Unit, Indian Institute of Science, Bangalore, 560012, India.
Chemphyschem. 2016 Mar 3;17(5):710-6. doi: 10.1002/cphc.201500973. Epub 2016 Jan 13.
Sn(4+) -doped In2 O3 (ITO) is a benchmark transparent conducting oxide material. We prepared ligand-free but colloidal ITO (8 nm, 10 % Sn(4+) ) nanocrystals (NCs) by using a post-synthesis surface-modification reaction. (CH3 )3 OBF4 removes the native oleylamine ligand from NC surfaces to give ligand-free, positively charged NCs that form a colloidal dispersion in polar solvents. Both oleylamine-capped and ligand-free ITO NCs exhibit intense absorption peaks, due to localized surface plasmon resonance (LSPR) at around λ=1950 nm. Compared with oleylamine-capped NCs, the electrical resistivity of ligand-free ITO NCs is lower by an order of magnitude (≈35 mΩ cm(-1) ). Resistivity over a wide range of temperatures can be consistently described as a composite of metallic ITO grains embedded in an insulating matrix by using a simple equivalent circuit, which provides an insight into the conduction mechanism in these systems.
掺锡(IV)的氧化铟(ITO)是一种基准透明导电氧化物材料。我们通过后合成表面改性反应制备了无配体但呈胶体状的ITO(8纳米,10%锡(IV))纳米晶体(NCs)。四氟硼酸三甲酯从纳米晶体表面去除天然油胺配体,得到无配体、带正电荷的纳米晶体,它们在极性溶剂中形成胶体分散体。由于在约λ = 1950纳米处的局域表面等离子体共振(LSPR),油胺封端的和无配体的ITO纳米晶体均表现出强烈的吸收峰。与油胺封端的纳米晶体相比,无配体的ITO纳米晶体的电阻率低一个数量级(≈35毫欧厘米-1)。通过使用一个简单的等效电路,在很宽的温度范围内的电阻率可以一致地描述为嵌入绝缘基质中的金属ITO晶粒的复合体,这为深入了解这些系统中的传导机制提供了思路。