Department of Materials Science and Engineering, and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea.
Nanoscale. 2016 Jul 21;8(29):13898-907. doi: 10.1039/c5nr08346j.
The broken ferroelectric hysteresis loop achieved from a Hf0.4Zr0.6O2 film was interpreted based on the first order phase transition theory. The two-step polarization switching, which was expected from the theory, could be observed by dynamic pulse switching measurement. The variations in the interfacial capacitance values along with switching time and number of switching cycles could also be estimated from the pulse switching test. Being different from the one-step polarization switching in other ferroelectric films, two-step polarization switching produced two slanted plateau regions where the estimated interfacial capacitance values were different from each other. This could be understood based on the quantitative model of the two-step polarization switching with the involvement of an intermediate nonpolar phase. The Hf0.4Zr0.6O2 film was changed from antiferroelectric-like to ferroelectric-like with the increasing number of electric field cycles, which could be induced by the field driven phase change.
从 Hf0.4Zr0.6O2 薄膜中获得的断裂铁电滞后回线基于一级相变理论进行了解释。通过动态脉冲开关测量,可以观察到理论上预期的两步极化开关。通过脉冲开关测试,还可以估算随开关时间和开关循环数变化的界面电容值。与其他铁电薄膜中的一步极化开关不同,两步极化开关产生了两个倾斜的平台区域,其中估算的界面电容值彼此不同。这可以基于涉及中间非极性相的两步极化开关的定量模型来理解。随着电场循环次数的增加,Hf0.4Zr0.6O2 薄膜从类反铁电相转变为铁电相,这可以通过场驱动的相变来诱导。