You Seung-Won, Lee Dong Hwi, Nguyen Manh Cuong, Jeon Yoon Seok, Tong Duc-Tai, Bang Hyun Joon, Jeong Jae Kyoung, Choi Rino
J Nanosci Nanotechnol. 2015 Oct;15(10):7590-2. doi: 10.1166/jnn.2015.11165.
Metal-oxide-semiconductor field effect transistors (MOSFETs) with various doses of La-incorporated in Hafnium-based dielectrics were characterized to evaluate the effect of La on dielectric and device properties. It is found that the Poole-Frenkel emission model could explain our experimental leakage current conduction mechanism reasonably and barrier heights of localized Poole-Frenkel trap sites increase gradually with increasing La incorporation. Cryogenic measurement (from 100 K to 300 K) of MOSFETs reveals that, as the content of La incorporation in the dielectric increases, the more increase of maximum effective mobility has been found at low temperature. It is mainly attributed to the more reduction of phonon scattering due to higher content of La atoms at the interface of dielectric and channel. Though it is relatively small, the existence of La in dielectric reduces coulomb scattering rate as well.
对在铪基电介质中掺入不同剂量镧的金属氧化物半导体场效应晶体管（MOSFET）进行了表征，以评估镧对电介质和器件性能的影响。发现普尔-弗伦克尔发射模型能够合理地解释我们实验中的漏电流传导机制，并且随着镧掺入量的增加，局域化普尔-弗伦克尔陷阱位点的势垒高度逐渐增加。MOSFET的低温测量（从100K到300K）表明，随着电介质中镧掺入量的增加，在低温下最大有效迁移率的增加幅度更大。这主要归因于电介质与沟道界面处镧原子含量较高，从而使声子散射的减少更多。虽然幅度相对较小，但电介质中镧的存在也降低了库仑散射率。
