Seo Jae Hwa, Yoon Young Jun, Cho Seongjae, Tae Heung-Sik, Lee Jung-Hee, Kang In Man
J Nanosci Nanotechnol. 2015 Oct;15(10):7615-9. doi: 10.1166/jnn.2015.11141.
The InO.53Ga0.47As-based planar-type junctionless fieled-effect transistor (JLFET) and fin-type FET (FinFET) have been designed and characterized by technology computer-aided design (TCAD) simulations. Because of their attractive material characteristics, the combination of In0.53Ga0.47As and InP has been adopted in some of the most recent semiconductor devices. In particular, the In0.53Ga0.47As-based transistor using an InP buffer is highly attractive due to its superior electrostatic performance which results from the by particular characteristics of the In0.53Ga0.47As material. In this paper, we focus on using small-signal RF modeling and Y-parameter extraction methods th extract various RF characteristics, such as gate capacitance, transconductance (gm), cut-off frequency (fT), and maximum oscillation frequency (fmax). The proposed InO.53Ga0.47As-based FinFET exhibits an on-state current (Ion) of 1030 μA/μm and an off-state current (Ioff) of 1.2 x 10(-13) A/μm with a threshold voltage (Vth) of 0.1 V, and a subthreshold swing (S) of 96 mV/dec. In addition, fT and fmax are determined to be 243 GHz and 1.6 THz, respectively.
基于InO.53Ga0.47As的平面型无结场效应晶体管（JLFET）和鳍式场效应晶体管（FinFET）已通过技术计算机辅助设计（TCAD）模拟进行了设计和表征。由于其具有吸引人的材料特性，In0.53Ga0.47As和InP的组合已被应用于一些最新的半导体器件中。特别是，基于In0.53Ga0.47As且使用InP缓冲层的晶体管因其卓越的静电性能而极具吸引力，这种卓越性能源于In0.53Ga0.47As材料的特殊特性。在本文中，我们专注于使用小信号射频建模和Y参数提取方法来提取各种射频特性，如栅极电容、跨导（gm）、截止频率（fT）和最大振荡频率（fmax）。所提出的基于InO.53Ga0.47As的FinFET表现出导通状态电流（Ion）为1030 μA/μm，截止状态电流（Ioff）为1.2×10⁻¹³ A/μm，阈值电压（Vth）为0.1 V，亚阈值摆幅（S）为96 mV/dec。此外，fT和fmax分别确定为243 GHz和1.6 THz。
