Seo Jae Hwa, Yoon Young Jun, Lee Hwan Gi, Yoo Gwan Min, Jo Young-Woo, Son Dong-Hyeok, Lee Jung-Hee, Cho Eou-Sik, Cho Seongjae, Kang In Man
J Nanosci Nanotechnol. 2014 Nov;14(11):8130-5.
Vertical-channel gallium nitride (GaN) junctionless nanowire transistor (JNT) has been designed and characterized by technology computer-aided design (TCAD) simulations. Various characteristics such as wide bandgap, strong polariztion field, and high electron velocity make GaN one of the attractive materials in advanced electronics in recent times. Nanowire-structured GaN can be applicable to various transistors for enhanced electrical performances by its geometrical feature. In this paper, we analyze the direct-current (DC) characteristics depending on various channel doping concentrations (N(ch)) and nanowire radii (R(NW)). Furthermore, the radio-frequency (RF) characteristics under optimized conditions are extracted by small-signal equivalent circuit modeling. For the optimally designed vertical GaN JNT demonstrated on-state current (I(on)) of 345 μA/μm and off-state current (I(off)) of 3.7 x 10(-18) A/μm with a threshold voltage (V(t)) of 0.22 V, and subthreshold swing (S) of 68 mV/dec. Besides, f(T) and f(max) under different operating conditions (gate voltage, V(GS)) have been obtained.
垂直沟道氮化镓（GaN）无结纳米线晶体管（JNT）已通过技术计算机辅助设计（TCAD）模拟进行了设计和表征。宽带隙、强极化场和高电子速度等各种特性使GaN成为近年来先进电子领域中具有吸引力的材料之一。纳米线结构的GaN因其几何特征可应用于各种晶体管以提高电学性能。在本文中，我们分析了取决于各种沟道掺杂浓度（N(ch)）和纳米线半径（R(NW)）的直流（DC）特性。此外，通过小信号等效电路建模提取了优化条件下的射频（RF）特性。对于优化设计的垂直GaN JNT，其导通状态电流（I(on)）为345 μA/μm，截止状态电流（I(off)）为3.7×10⁻¹⁸ A/μm，阈值电压（V(t)）为0.22 V，亚阈值摆幅（S）为68 mV/dec。此外，还获得了不同工作条件（栅极电压，V(GS)）下的f(T)和f(max)。
