Kim Sung Yoon, Seo Jae Hwa, Yoon Young Jun, Lee Ho-Young, Lee Seong Min, Cho Seongjae, Kang In Man
J Nanosci Nanotechnol. 2015 Oct;15(10):7486-92. doi: 10.1166/jnn.2015.11142.
In this work, we design and analyze complementary metal-oxide-semiconductor (CMOS)-compatible III-V compound electron-hole bilayer (EHB) tunneling field-effect transistors (TFETs) by using two-dimensional (2D) technology computer-aided design (TCAD) simulations. A recently proposed EHB TFET exploits a bias-induced band-to-band tunneling (BTBT) across the electron-hole bilayer by an electric field from the top and bottom gates. This is in contrast to conventional planar p(+)-p(-)-n TFETs, which utilize BTBT across the source-to-channel junction. We applied III-V compound semiconductor materials to the EHB TFETs in order to enhance the current drivability and switching performance. Devices based on various compound semiconductor materials have been designed and analyzed in terms of their primary DC characteristics. In addition, the operational principles were validated by close examination of the electron concentrations and energy-band diagrams under various operation conditions. The simulation results of the optimally designed In0.533Ga0.47As EHB TFET show outstanding performance, with an on-state current (Ion) of 249.5 μA/μm, subthreshold swing (S) of 11.4 mV/dec, and threshold voltage (Vth) of 50 mV at VDS = 0.5 V. Based on the DC-optimized InGaAs EHB TFET, the CMOS inverter circuit was simulated in views of static and dynamic behaviors of the p-channel device with exchanges between top and bottom gates or between source and drain electrodes maintaining the device structure.
在这项工作中，我们通过使用二维（2D）技术计算机辅助设计（TCAD）模拟，设计并分析了与互补金属氧化物半导体（CMOS）兼容的III-V族化合物电子-空穴双层（EHB）隧穿场效应晶体管（TFET）。最近提出的EHB TFET利用顶部和底部栅极产生的电场，在电子-空穴双层上实现偏置诱导的带间隧穿（BTBT）。这与传统的平面p(+)-p(-)-n TFET不同，传统TFET利用源极到沟道结之间的BTBT。我们将III-V族化合物半导体材料应用于EHB TFET，以提高电流驱动能力和开关性能。基于各种化合物半导体材料的器件已根据其主要直流特性进行了设计和分析。此外，通过仔细研究各种工作条件下的电子浓度和能带图，验证了其工作原理。优化设计的In0.533Ga0.47As EHB TFET的模拟结果显示出优异的性能，在VDS = 0.5 V时，导通电流（Ion）为249.5 μA/μm，亚阈值摆幅（S）为11.4 mV/dec，阈值电压（Vth）为50 mV。基于直流优化的InGaAs EHB TFET，在保持器件结构的情况下，通过交换顶部和底部栅极或源极和漏极电极，从p沟道器件的静态和动态行为角度对CMOS反相器电路进行了模拟。
