Khurelbaatar Zagarzusem, Kil Yeon-Ho, Kim Taek Sung, Shim Kyu-Hwan, Hong Hyobong, Choi Chel-Jong
J Nanosci Nanotechnol. 2015 Oct;15(10):7832-5. doi: 10.1166/jnn.2015.11195.
We report on the optoelectronic characterization of Ge p-i-n infrared photodetector fabricated on Ge-on-Si substrate using rapid thermal chemical vapor deposition (RTCVD). The phosphorous doping concentration and the root mean square (RMS) surface roughness of epitaxial layer was estimated to be 2 x 10(18) cm(-3) and 1.2 nm, respectively. The photodetector were characterized with respect to their dark, photocurrent and responsivities in the wavelength range of 1530-1630 nm. At 1550 nm wavelength, responsivity of 0.32 A/W was measured for a reverse bias of 1 V, corresponding to 25% external quantum efficiency, without an optimal antireflection coating. Responsivity drastically reduced from 1560 nm wavelength which could be attributed to decreased absorption of Ge at room temperature.
我们报告了使用快速热化学气相沉积（RTCVD）在硅基锗衬底上制造的锗 p-i-n 红外光电探测器的光电特性。外延层的磷掺杂浓度和均方根（RMS）表面粗糙度估计分别为 2×10¹⁸ cm⁻³ 和 1.2 nm。对该光电探测器在 1530 - 1630 nm 波长范围内的暗电流、光电流和响应度进行了表征。在 1550 nm 波长下，反向偏压为 1 V 时测得的响应度为 0.32 A/W，对应 25% 的外部量子效率，且未采用优化的抗反射涂层。响应度在 1560 nm 波长处急剧下降，这可能归因于室温下锗的吸收减少。
