Lin Guangyang, Liang Dongxue, Yu Chunyu, Hong Haiyang, Mao Yichen, Li Cheng, Chen Songyan
Opt Express. 2019 Oct 28;27(22):32801-32809. doi: 10.1364/OE.27.032801.
A 2.7% tensile strained Ge/SiGe heterostructure nanowire (NW) is in-situ fabricated by a three-dimensional Ge condensation method. The NW metal-semiconductor-metal (MSM) photodetector demonstrates an ultra-broadband detection wavelength of 400-2400 nm, showing a high responsivity of >3.46×10 A/W with a photocurrent gain of >4.32×10 at 1550 nm under -2 V. A high normalized photocurrent to dark current ratio (NPDR) of 1.88×10 W at 1550 nm under -1 V is achieved. The fully complementary metal-oxide-semiconductor (CMOS) compatible, simple and scalable process suggest that the Ge heterostructure NW is promising for low cost, high performance near-infrared or short wavelength infrared focal plane array applications.
通过三维锗凝聚法原位制备了拉伸应变2.7%的锗/硅锗异质结构纳米线（NW）。该NW金属-半导体-金属（MSM）光电探测器展示了400-2400nm的超宽带探测波长，在-2V、1550nm下表现出大于3.46×10 A/W 的高响应度以及大于4.32×10 的光电流增益。在-1V、1550nm下实现了1.88×10 W的高光电流与暗电流归一化比值（NPDR）。完全互补金属氧化物半导体（CMOS）兼容、简单且可扩展的工艺表明，锗异质结构NW在低成本、高性能近红外或短波长红外焦平面阵列应用方面具有前景。
