Le Chinh Tam, Senthilkumar Velusamy, Kim Yong Soo
J Nanosci Nanotechnol. 2015 Oct;15(10):8133-8. doi: 10.1166/jnn.2015.11255.
Monolayer molybdenum disulfide (MoS2) is an emerging two-dimensional material beyond graphene, which could potentially be applicable to lightweight, flexible optoelectronic device. In this study, we have demonstrated a planar metal-semiconductor-metal (MSM) photodetectors based on large area monolayer MoS2. The monolayer MoS2 was grown via chemical vapor deposition method, showing excellent structural and optical properties. The current-voltage measurement was characterized at various monochromatic lights in visible spectrum. The device exhibited good responsivity ~7.7 mA/W for wavelength of ~470 nm, which is relatively comparative to mechanical exfoliated monolayer MoS2 based photodetectors. Additionally, the photoresponse measurement showed that the rise/fall time was about 1/0.7 s.
单层二硫化钼（MoS2）是一种超越石墨烯的新兴二维材料，有望应用于轻质、柔性光电器件。在本研究中，我们展示了一种基于大面积单层MoS2的平面金属-半导体-金属（MSM）光电探测器。单层MoS2通过化学气相沉积法生长，具有优异的结构和光学性能。在可见光谱的各种单色光下对电流-电压进行了测量。该器件在波长约为470 nm时表现出良好的响应度，约为7.7 mA/W，与基于机械剥离单层MoS2的光电探测器相比具有可比性。此外，光响应测量表明上升/下降时间约为1/0.7 s。
