Kim Sang-Kon
J Nanosci Nanotechnol. 2015 Oct;15(10):8183-6. doi: 10.1166/jnn.2015.11288.
Directed self-assembly (DSA) of block copolymers (BCPs) has become an intense field of study as a complementary technique to conventional lithography for 1×-nm semiconductor patterning. DSA contact hole (C/H) shrinking is a possible implemental technique in the DSA process. In this paper, a DSA C/H shrinking is fully modeled and simulated by using a self-consistent field theory (SCFT). Simulation results show good agreement with experiment results. In terms of this simulation, the potential of DSA C/H shrinking with thermal reflow is integrated into the conventional CMOS lithography process in order to achieve high resolution and pattern density multiplication at a low cost. The optical proximity correction (OPC) of DSA C/H shrinking due to prepattern C/H and pitch can increase process window for DSA C/H shrinking.
作为一种用于1×纳米半导体图案化的传统光刻技术的补充技术，嵌段共聚物（BCP）的定向自组装（DSA）已成为一个热门的研究领域。DSA接触孔（C/H）收缩是DSA工艺中一种可能的实施技术。本文利用自洽场理论（SCFT）对DSA C/H收缩进行了全面建模和模拟。模拟结果与实验结果吻合良好。基于此模拟，将具有热回流的DSA C/H收缩的潜力整合到传统CMOS光刻工艺中，以低成本实现高分辨率和图案密度倍增。由于预图案C/H和间距导致的DSA C/H收缩的光学邻近校正（OPC）可以增加DSA C/H收缩的工艺窗口。
