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热探针扫描光刻技术用于定向自组装嵌段共聚物。

Thermal scanning probe lithography for the directed self-assembly of block copolymers.

机构信息

Instituto de Microelectrónica de Barcelona IMB-CNM, CSIC, E-08193 Bellaterra, Barcelona, Spain.

出版信息

Nanotechnology. 2017 Apr 28;28(17):175301. doi: 10.1088/1361-6528/aa673c.

DOI:10.1088/1361-6528/aa673c
PMID:28374684
Abstract

Thermal scanning probe lithography (t-SPL) is applied to the fabrication of chemical guiding patterns for directed self-assembly (DSA) of block copolymers (BCP). The two key steps of the overall process are the accurate patterning of a poly(phthalaldehyde) resist layer of only 3.5 nm thickness, and the subsequent oxygen-plasma functionalization of an underlying neutral poly(styrene-random-methyl methacrylate) brush layer. We demonstrate that this method allows one to obtain aligned line/space patterns of poly(styrene-block-methyl methacrylate) BCP of 18.5 and 11.7 nm half-pitch. Defect-free alignment has been demonstrated over areas of tens of square micrometres. The main advantages of t-SPL are the absence of proximity effects, which enables the realization of patterns with 10 nm resolution, and its compatibility with standard DSA methods. In the brush activation step by oxygen-plasma exposure, we observe swelling of the brush. This effect is discussed in terms of the chemical reactions occurring in the exposed areas. Our results show that t-SPL can be a suitable method for research activities in the field of DSA, in particular for low-pitch, high-χ BCP to achieve sub-10 nm line/space patterns.

摘要

热探针光刻(t-SPL)被应用于用于定向自组装(DSA)的嵌段共聚物(BCP)的化学引导图案的制造。整个过程的两个关键步骤是仅 3.5nm 厚的聚(邻苯二甲醛)抗蚀剂层的精确图案化,以及随后对中性聚(苯乙烯-随机-甲基丙烯酸甲酯)刷层的氧等离子体功能化。我们证明,这种方法可以获得 18.5nm 和 11.7nm 半间距的聚(苯乙烯-甲基丙烯酸甲酯)BCP 的对准线/空间图案。已经证明在数十平方微米的区域内可以实现无缺陷的对准。t-SPL 的主要优点是不存在近场效应,这使得可以实现具有 10nm 分辨率的图案,并且与标准的 DSA 方法兼容。在氧等离子体暴露的刷激活步骤中,我们观察到刷的膨胀。根据在暴露区域中发生的化学反应来讨论此效果。我们的结果表明,t-SPL 可以成为 DSA 领域研究活动的一种合适方法,特别是对于低间距、高 χ BCP 以实现小于 10nm 的线/空间图案。

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