Jangr Hoon-Sik, Jeon Sang Koo, Shim Dae Seob, Lee Nam Hee, Nahm Seung Hoon
J Nanosci Nanotechnol. 2015 Nov;15(11):9071-6. doi: 10.1166/jnn.2015.11575.
Large-scale graphene or carbon nanotube (CNT) films are good candidates for transparent flexible electrodes, and the strong interest in graphene and CNT films has motivated the scalable production of a good-conductivity and an optically transmitting film. Unzipping techniques for converting CNTs to graphene are especially worthy of notice. Here, we performed nanotube unzipping of the spun multi-walled carbon nanotubes (MWCNTs) to produce networked graphene nanoribbon (GNR) sheet films using an 02 plasma etching method, after which we produced the spun MWCNT film by continually pulling MWCNTs down from the vertical well aligned MWCNTs on the substrate. The electrical resistance was slightly decreased and the optical transmittance was significantly increased when the spun MWCNT films were etched for 20 min by O2 plasma of 100 mA. Plasma etching for the optimized time, which does not change the thickness of the spun MWCNT films, improved the electrical resistance and the optical transmittance.
大规模石墨烯或碳纳米管（CNT）薄膜是透明柔性电极的理想候选材料，对石墨烯和碳纳米管薄膜的浓厚兴趣推动了具有良好导电性和光学透射性薄膜的可扩展生产。将碳纳米管转化为石墨烯的解缠技术尤其值得关注。在此，我们使用02等离子体蚀刻方法对纺丝多壁碳纳米管（MWCNT）进行纳米管解缠，以制备网络化石墨烯纳米带（GNR）片状薄膜，之后通过从基板上垂直排列的MWCNT中持续向下拉MWCNT来制备纺丝MWCNT薄膜。当用100 mA的O2等离子体对纺丝MWCNT薄膜蚀刻20分钟时，电阻略有降低，光学透射率显著提高。在不改变纺丝MWCNT薄膜厚度的情况下进行优化时间的等离子体蚀刻，改善了电阻和光学透射率。
