Mohammad-Zamani Mohammad Javad, Neshat Mohammad, Moravvej-Farshi Mohammad Kazem
Opt Lett. 2016 Jan 15;41(2):420-3. doi: 10.1364/OL.41.000420.
A new generation unbiased antennaless CW terahertz (THz) photomixer emitters array made of asymmetric metal-semiconductor-metal (MSM) gratings with a subwavelength pitch, operating in the optical near-field regime, is proposed. We take advantage of size effects in near-field optics and electrostatics to demonstrate the possibility of enhancing the THz power by 4 orders of magnitude, compared to a similar unbiased antennaless array of the same size that operates in the far-field regime. We show that, with the appropriate choice of grating parameters in such THz sources, the first plasmonic resonant cavity mode in the nanoslit between two adjacent MSMs can enhance the optical near-field absorption and, hence, the generation of photocarriers under the slit in the active medium. These photocarriers, on the other hand, are accelerated by the large built-in electric field sustained under the nanoslits by two dissimilar Schottky barriers to create the desired large THz power that is mainly radiated downward. The proposed structure can be tuned in a broadband frequency range of 0.1-3 THz, with output power increasing with frequency.
提出了一种由具有亚波长间距的非对称金属-半导体-金属(MSM)光栅制成的新一代无偏置无天线连续波太赫兹(THz)光混频器发射器阵列,其工作在光学近场区域。我们利用近场光学和静电学中的尺寸效应,证明与在远场区域工作的相同尺寸的类似无偏置无天线阵列相比,太赫兹功率有可能提高4个数量级。我们表明,在这种太赫兹源中,通过适当选择光栅参数,两个相邻MSM之间的纳米狭缝中的第一等离子体共振腔模式可以增强光学近场吸收,从而增强有源介质中狭缝下方光载流子的产生。另一方面,这些光载流子被两个不同的肖特基势垒在纳米狭缝下方维持的大内置电场加速,以产生所需的大太赫兹功率,该功率主要向下辐射。所提出的结构可以在0.1 - 3太赫兹的宽带频率范围内进行调谐,输出功率随频率增加。