Yang Hee Yeon, Park Han-Wool, Kim Soo Jin, Hong Jae-Min, Kim Tae Whan, Kim Do Hwan, Lim Jung Ah
Photo-electronic Hybrids Research Center, Korea Institute of Science and Technology, 02792 Seoul, Korea and Department of Electronics and Computer Engineering, Hanyang University, 04763 Seoul, Korea.
Department of Organic Materials and Fiber Engineering, Soongsil University, 06978 Seoul, Korea.
Phys Chem Chem Phys. 2016 Feb 14;18(6):4627-34. doi: 10.1039/c5cp06989k.
Here we demonstrated the split-second crystallization of a liquid-crystalline conjugated polymer semiconductor induced by irradiation with intense pulsed white light (IPWL) for the efficient improvement of electrical properties of flexible thin film transistors. A few seconds of IPWL irradiation of poly(didodecylquaterthiophene-alt-didodecylbithiazole) (PQTBTz-C12) thin films generated heat energy through the photo-thermal effect, leading to the crystallization of PQTBTz-C12 and formation of nodule-like nanostructures. The IPWL-induced crystallization of PQTBTz-C12 resulted in a threefold improvement in the field-effect mobility of thin film transistors compared to as-prepared devices. The conformational change of the PQTBTz-C12 chains was found to be strongly related to the irradiation fluence. As a proof-of-concept, the IPWL treatment was successfully applied to the PQTBTz-C12 layer in flexible transistors based on plastic substrates. The performance of these flexible devices was significantly improved after only 0.6 s of IPWL treatment, without deformation of the plastic substrate.
在此，我们展示了通过强脉冲白光（IPWL）照射诱导液晶共轭聚合物半导体瞬间结晶，从而有效改善柔性薄膜晶体管的电学性能。对聚（二十二烷基四噻吩-alt-二十二烷基二噻唑）（PQTBTz-C12）薄膜进行几秒的IPWL照射，通过光热效应产生热能，导致PQTBTz-C12结晶并形成结节状纳米结构。与制备好的器件相比，IPWL诱导的PQTBTz-C12结晶使薄膜晶体管的场效应迁移率提高了三倍。发现PQTBTz-C12链的构象变化与照射通量密切相关。作为概念验证，IPWL处理成功应用于基于塑料基板的柔性晶体管中的PQTBTz-C12层。仅经过0.6 s的IPWL处理后，这些柔性器件的性能就得到了显著改善，且塑料基板未变形。
