Department of Chemical and Biological Engineering, Korea University , 02841 Seoul, Korea.
Center for Optoelectronic Materials and Devices, Korea Institute of Science and Technology , 02792 Seoul, Korea.
ACS Appl Mater Interfaces. 2017 Apr 5;9(13):11721-11731. doi: 10.1021/acsami.6b14957. Epub 2017 Mar 27.
We report the instantaneous pulsed-light cross-linking of polymer gate dielectrics on a flexible substrate by using intensely pulsed white light (IPWL) irradiation. Irradiation with IPWL for only 1.8 s of a poly(4-vinylphenol) (PVP) thin film with the cross-linking agent poly(melamine-co-formaldehyde) (PMF) deposited on a plastic substrate was found to yield fully cross-linked PVP films. It was confirmed that the IPWL-cross-linked PVP films have smooth pinhole-free surfaces and exhibit a low leakage current density, organic solvent resistance, and good compatibility with organic semiconductor, and that they can be used as replacements for typical PVP dielectrics that are cross-linked with time and energy intensive thermal heating processes. The synchronization of the IPWL irradiation with substrate transfer was found to enable the preparation of cross-linked PVP films on large area substrates with a highly uniform capacitance. Flexible OTFT based on IPWL-cross-linked PVP dielectrics were found to exhibit good electrical performance that is comparable to that of devices with thermally cross-linked PVP dielectric, as well as excellent deformation stability even at a bending radius of 3 mm.
我们报告了在柔性衬底上通过使用强脉冲白光（IPWL）辐照来实现聚合物栅介质的瞬时脉冲光交联。发现仅对沉积在塑料衬底上的交联剂聚（三聚氰胺-甲醛）（PMF）的聚（4-乙烯基苯酚）（PVP）薄膜进行 1.8 秒的 IPWL 辐照，就可以得到完全交联的 PVP 薄膜。证实了 IPWL 交联的 PVP 薄膜具有光滑无针孔的表面，表现出低漏电流密度、有机溶剂抗性以及与有机半导体的良好兼容性，并且可以替代典型的 PVP 电介质，这些电介质需要通过耗时且耗能的热加热过程进行交联。发现 IPWL 辐照与衬底传输的同步可以在大面积衬底上制备具有高度均匀电容的交联 PVP 薄膜。基于 IPWL 交联的 PVP 电介质的柔性 OTFT 被发现表现出与具有热交联 PVP 电介质的器件相当的良好电性能，以及即使在 3mm 的弯曲半径下也具有出色的变形稳定性。
