Li Dong, Zheng Wanchao, Zheng Dongxing, Gong Junlu, Wang Liyan, Jin Chao, Li Peng, Bai Haili
Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Institute of Advanced Materials Physics, Faculty of Science, Tianjin University , Tianjin 300072, People's Republic of China.
ACS Appl Mater Interfaces. 2016 Feb 17;8(6):3977-84. doi: 10.1021/acsami.5b11265. Epub 2016 Feb 4.
Electric field induced reversible switchings of the magnetization and resistance were achieved at room temperature in epitaxial Mn:ZnO(110)/BiFeO3(001) heterostructures. The observed modulation of magnetic moment is ∼500% accompanying with a coercive field varying from 43 to 300 Oe and a resistive switching ratio up to ∼10(4)% with the applied voltages of ±4 V. The switching mechanisms in magnetization and resistance are attributed to the ferroelectric polarization reversal of the BiFeO3 layer under applied electric fields, combined with the reversible change of oxygen vacancy concentration at the Mn:ZnO/BiFeO3 interface.
在室温下，在外延生长的Mn:ZnO(110)/BiFeO3(001)异质结构中实现了电场诱导的磁化和电阻的可逆切换。观察到的磁矩调制约为500%，同时矫顽场在43至300奥斯特之间变化，并且在±4 V的外加电压下电阻切换比高达约10(4)%。磁化和电阻的切换机制归因于在施加电场下BiFeO3层的铁电极化反转，以及Mn:ZnO/BiFeO3界面处氧空位浓度的可逆变化。
