Zheng Dahuai, Kong Yongfa, Liu Shiguo, Chen Muling, Chen Shaolin, Zhang Ling, Rupp Romano, Xu Jingjun
School of Physics, Nankai University, Tianjin 300071, China.
Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China.
Sci Rep. 2016 Feb 3;6:20308. doi: 10.1038/srep20308.
For a long time that optical damage was renamed as photorefraction, here we find that the optical damage resistance and photorefraction can be simultaneously enhanced in MgO and Bi2O3 co-doped LiNbO3 (LN:Bi,Mg). The photorefractive response time of LN:Bi,Mg was shortened to 170 ms while the photorefractive sensitivity reached up to 21 cm(2)/J. Meanwhile, LN:Bi,Mg crystals could withstand a light intensity higher than 10(6) W/cm(2) without apparent optical damage. Our experimental results indicate that photorefraction doesn't equal to optical damage. The underground mechanism was analyzed and attributed to that diffusion dominates the transport process of charge carriers, that is to say photorefraction causes only slight optical damage under diffusion mechanism, which is very important for the practical applications of photorefractive crystals, such as in holographic storage, integrated optics and 3D display.
长期以来，光损伤被重新命名为光折变，在此我们发现，在MgO和Bi2O3共掺杂的LiNbO3（LN:Bi,Mg）中，光损伤抗性和光折变可以同时得到增强。LN:Bi,Mg的光折变响应时间缩短至170毫秒，而光折变灵敏度高达21 cm²/J。同时，LN:Bi,Mg晶体能够承受高于10⁶ W/cm²的光强而无明显光损伤。我们的实验结果表明，光折变并不等同于光损伤。分析了其潜在机制并归因于扩散主导了电荷载流子的输运过程，也就是说在扩散机制下光折变仅导致轻微的光损伤，这对于光折变晶体在全息存储、集成光学和3D显示等实际应用中非常重要。
