Spina M, Náfrádi B, Tóháti H M, Kamarás K, Bonvin E, Gaal R, Forró L, Horváth E
Laboratory of Physics of Complex Matter (LPMC), Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland.
Institute for Solid State Physics and Optics, Wigner Research Centre for Physics, Hungarian Academy of Sciences, 1525 Budapest, Hungary.
Nanoscale. 2016 Mar 7;8(9):4888-93. doi: 10.1039/c5nr06727h.
Field-effect phototransistors were fabricated based on individual carbon nanotubes (CNTs) sensitized by CH3NH3PbI3 nanowires (MAPbI3NWs). These devices represent light responsivities of R = 7.7 × 10(5) A W(-1) under low-lighting conditions in the nW mm(-2) range, unprecedented among CNT-based photodetectors. At high incident power (∼1 mW mm(-2)), light soaking results in a negative photocurrent, turning the device insulating. We interpret the phenomenon as a result of efficient free photoexcited charge generation and charge transfer of photoexcited holes from the perovskite to the carbon nanotube. The charge transfer improves conductance by increasing the number of carriers, but leaves electrons behind. At high illumination intensity their random electrostatic potential quenches mobility in the nanotube.
基于由CH3NH3PbI3纳米线（MAPbI3NWs）敏化的单个碳纳米管（CNT）制备了场效应光电晶体管。这些器件在nW mm(-2)范围内的低光照条件下表现出R = 7.7 × 10(5) A W(-1)的光响应率，这在基于碳纳米管的光电探测器中是前所未有的。在高入射功率（~1 mW mm(-2)）下，光浸泡会导致负光电流，使器件绝缘。我们将该现象解释为高效的自由光激发电荷产生以及光激发空穴从钙钛矿到碳纳米管的电荷转移的结果。电荷转移通过增加载流子数量来提高电导率，但会留下电子。在高光照强度下，它们随机的静电势会淬灭纳米管中的迁移率。
