Le Nam B, Huan Tran Doan, Woods Lilia M
Department of Physics, University of South Florida , Tampa, Florida 33620, United States.
Institute of Engineering Physics, Hanoi University of Science and Technology , 1 Dai Co Viet, Hanoi, Vietnam.
ACS Appl Mater Interfaces. 2016 Mar 9;8(9):6286-92. doi: 10.1021/acsami.6b00285. Epub 2016 Feb 24.
Artificial van der Waals heterostructures constitute an emerging field that promises to design systems with properties on demand. Stacking patterns and the utilization of different types of chemically inert layers can deliver novel materials and devices. Despite the relatively weak van der Waals interaction, which does not affect the electronic properties around the Fermi level, our first-principles calculations show significant changes in the higher conduction and deeper valence regions in the considered graphene/silicene, graphene/MoS2, and silicene/MoS2 systems. Such changes are linked to strong out-of-plane hybridization effects and van der Waals interactions. We also find that the interface coupling significantly affects the vibrational properties of the heterostructures when compared to the individual constituents. Specifically, the van der Waals coupling is found to be a major factor for the stability of the system. The emergence of shear and breathing modes, as well as the transformation of flexural modes, are also found.
人工范德华异质结构构成了一个新兴领域,有望按需设计具有特定性能的系统。堆叠模式以及不同类型化学惰性层的利用能够产生新型材料和器件。尽管范德华相互作用相对较弱,不会影响费米能级附近的电子性质,但我们的第一性原理计算表明,在所考虑的石墨烯/硅烯、石墨烯/二硫化钼和硅烯/二硫化钼系统中,较高的导带区域和较深的价带区域发生了显著变化。这些变化与强烈的面外杂化效应和范德华相互作用有关。我们还发现,与单个组分相比,界面耦合对异质结构的振动性质有显著影响。具体而言,范德华耦合是系统稳定性的主要因素。此外,还发现了剪切和呼吸模式的出现以及弯曲模式的转变。